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ISL9N302AS3ST

  • ISL9N302AS3ST
  • ISL9N302AS3ST

ISL9N302AS3ST

ISL9N302AS3ST

ON Semiconductor

ISL9N302AS3ST datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

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ISL9N302AS3ST Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series UltraFET™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 345W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.414074 $1.414074
10 $1.334032 $13.34032
100 $1.258521 $125.8521
500 $1.187283 $593.6415
1000 $1.120079 $1120.079
ISL9N302AS3ST Product Details

Description


The ISL9N302AS3ST is an N-Channel Logic Level PWM Optimized UltraFET? Trench Power MOSFETs. This device has a brand-new, cutting-edge trench MOSFET design and has a low gate charge while yet having a low on-resistance. This device, which has been tailored for switching applications, increases the overall effectiveness of DC/DC converters and enables operation at greater switching frequencies.



Features


  • Qg (Typ) = 110nC, VGS = 5V

  • Qgd (Typ) = 31nC

  • CISS (Typ) = 11000pF

  • Fast switching

  • rDS(ON) = 0.0019? (Typ), VGS = 10V

  • rDS(ON) = 0.0027? (Typ), VGS = 4.5V



Applications


  • DC/DC converters

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications


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