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KSA1010OTU

KSA1010OTU

KSA1010OTU

ON Semiconductor

KSA1010OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1010OTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSA1010
Power - Max 1.5W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 7A
KSA1010OTU Product Details

KSA1010OTU Overview


In this device, the DC current gain is 60 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 500mA, 5A.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

KSA1010OTU Features


the DC current gain for this device is 60 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A

KSA1010OTU Applications


There are a lot of ON Semiconductor KSA1010OTU applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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