KSA1010OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA1010OTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA1010
Power - Max
1.5W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
7A
KSA1010OTU Product Details
KSA1010OTU Overview
In this device, the DC current gain is 60 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 500mA, 5A.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSA1010OTU Features
the DC current gain for this device is 60 @ 3A 5V the vce saturation(Max) is 600mV @ 500mA, 5A
KSA1010OTU Applications
There are a lot of ON Semiconductor KSA1010OTU applications of single BJT transistors.