MPS6560G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 500mA 1V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.As a result, the part has a transition frequency of 60MHz.In extreme cases, the collector current can be as low as 500mA volts.
MPS6560G Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 60MHz
MPS6560G Applications
There are a lot of ON Semiconductor MPS6560G applications of single BJT transistors.
- Interface
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- Driver
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- Inverter
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- Muting
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