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KSA1010Y

KSA1010Y

KSA1010Y

ON Semiconductor

KSA1010Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1010Y Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code compliant
Base Part Number KSA1010
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 1.5W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 7A
Power Dissipation-Max (Abs) 40W
VCEsat-Max 0.6 V
Turn Off Time-Max (toff) 2000ns
Turn On Time-Max (ton) 500ns
Power Dissipation Ambient-Max 1.5W
Fall Time-Max (tf) 500ns
KSA1010Y Product Details

KSA1010Y Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 3A 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 500mA, 5A.There is a 100V maximal voltage in the device due to collector-emitter breakdown.

KSA1010Y Features


the DC current gain for this device is 100 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A

KSA1010Y Applications


There are a lot of ON Semiconductor KSA1010Y applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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