KSA1010Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA1010Y Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Reach Compliance Code
compliant
Base Part Number
KSA1010
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
1.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
7A
Power Dissipation-Max (Abs)
40W
VCEsat-Max
0.6 V
Turn Off Time-Max (toff)
2000ns
Turn On Time-Max (ton)
500ns
Power Dissipation Ambient-Max
1.5W
Fall Time-Max (tf)
500ns
KSA1010Y Product Details
KSA1010Y Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 3A 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 500mA, 5A.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
KSA1010Y Features
the DC current gain for this device is 100 @ 3A 5V the vce saturation(Max) is 600mV @ 500mA, 5A
KSA1010Y Applications
There are a lot of ON Semiconductor KSA1010Y applications of single BJT transistors.