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KSA614RTU

KSA614RTU

KSA614RTU

ON Semiconductor

KSA614RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA614RTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSA614
Power - Max 25W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 55V
Current - Collector (Ic) (Max) 3A
KSA614RTU Product Details

KSA614RTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Collector Emitter Breakdown occurs at 55VV - Maximum voltage.

KSA614RTU Features


the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A

KSA614RTU Applications


There are a lot of ON Semiconductor KSA614RTU applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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