KSA614RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA614RTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA614
Power - Max
25W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
55V
Current - Collector (Ic) (Max)
3A
KSA614RTU Product Details
KSA614RTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Collector Emitter Breakdown occurs at 55VV - Maximum voltage.
KSA614RTU Features
the DC current gain for this device is 40 @ 500mA 5V the vce saturation(Max) is 500mV @ 100mA, 1A
KSA614RTU Applications
There are a lot of ON Semiconductor KSA614RTU applications of single BJT transistors.