MMJT9410T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 800mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 300mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.72MHz is present in the transition frequency.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MMJT9410T1G Features
the DC current gain for this device is 85 @ 800mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 72MHz
MMJT9410T1G Applications
There are a lot of ON Semiconductor MMJT9410T1G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
