KSB1116AGTA Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 1A.Emitter base voltages of -6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.During maximum operation, collector current can be as low as 1A volts.
KSB1116AGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1A
KSB1116AGTA Applications
There are a lot of ON Semiconductor KSB1116AGTA applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
