KSB1121STF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSB1121STF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
SOT-89-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.3W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 75mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
150MHz
KSB1121STF Product Details
KSB1121STF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 100mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 75mA, 1.5A.Product comes in the supplier's device package SOT-89-3.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSB1121STF Features
the DC current gain for this device is 140 @ 100mA 2V the vce saturation(Max) is 600mV @ 75mA, 1.5A the supplier device package of SOT-89-3
KSB1121STF Applications
There are a lot of ON Semiconductor KSB1121STF applications of single BJT transistors.