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KSB1121STF

KSB1121STF

KSB1121STF

ON Semiconductor

KSB1121STF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSB1121STF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.3W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 75mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 150MHz
KSB1121STF Product Details

KSB1121STF Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 100mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 75mA, 1.5A.Product comes in the supplier's device package SOT-89-3.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

KSB1121STF Features


the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the supplier device package of SOT-89-3

KSB1121STF Applications


There are a lot of ON Semiconductor KSB1121STF applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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