KSB546Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSB546Y Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Reach Compliance Code
compliant
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
25W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 400mA 10V
Current - Collector Cutoff (Max)
50μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
2A
Transition Frequency
5MHz
Frequency - Transition
5MHz
KSB546Y Product Details
KSB546Y Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 400mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 5MHz.Detection of Collector Emitter Breakdown at 150V maximal voltage is present.
KSB546Y Features
the DC current gain for this device is 120 @ 400mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA a transition frequency of 5MHz
KSB546Y Applications
There are a lot of ON Semiconductor KSB546Y applications of single BJT transistors.