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KSB546Y

KSB546Y

KSB546Y

ON Semiconductor

KSB546Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSB546Y Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code compliant
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 25W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 400mA 10V
Current - Collector Cutoff (Max) 50μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 2A
Transition Frequency 5MHz
Frequency - Transition 5MHz
KSB546Y Product Details

KSB546Y Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 400mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 5MHz.Detection of Collector Emitter Breakdown at 150V maximal voltage is present.

KSB546Y Features


the DC current gain for this device is 120 @ 400mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 5MHz

KSB546Y Applications


There are a lot of ON Semiconductor KSB546Y applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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