KSB564ACGBU Overview
In this device, the DC current gain is 200 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.During maximum operation, collector current can be as low as 1A volts.
KSB564ACGBU Features
the DC current gain for this device is 200 @ 100mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
KSB564ACGBU Applications
There are a lot of ON Semiconductor KSB564ACGBU applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
