KSB596O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSB596O Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
compliant
Base Part Number
KSB596
Power - Max
30W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 5V
Current - Collector Cutoff (Max)
70μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.7V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
3MHz
KSB596O Product Details
KSB596O Overview
DC current gain in this device equals 70 @ 500mA 5V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
KSB596O Features
the DC current gain for this device is 70 @ 500mA 5V the vce saturation(Max) is 1.7V @ 300mA, 3A
KSB596O Applications
There are a lot of ON Semiconductor KSB596O applications of single BJT transistors.