DCP54-16-13 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A 1A continuous collector voltage is necessary to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Parts of this part have transition frequencies of 200MHz.There is a breakdown input voltage of 45V volts that it can take.When collector current reaches its maximum, it can reach 1A volts.

DCP54-16-13 Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

DCP54-16-13 Applications

There are a lot of Diodes Incorporated DCP54-16-13 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter