CJD50 TR13 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CJD50 TR13 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
1.56W
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1A
Transition Frequency
10MHz
Frequency - Transition
10MHz
Power Dissipation-Max (Abs)
15W
RoHS Status
ROHS3 Compliant
CJD50 TR13 PBFREE Product Details
CJD50 TR13 PBFREE Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 300mA 10V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In the part, the transition frequency is 10MHz.Device displays Collector Emitter Breakdown (400V maximal voltage).
CJD50 TR13 PBFREE Features
the DC current gain for this device is 30 @ 300mA 10V the vce saturation(Max) is 1V @ 200mA, 1A a transition frequency of 10MHz
CJD50 TR13 PBFREE Applications
There are a lot of Central Semiconductor Corp CJD50 TR13 PBFREE applications of single BJT transistors.