KSB596OTU Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 300mA, 3A.In this part, there is a transition frequency of 3MHz.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
KSB596OTU Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 1.7V @ 300mA, 3A
a transition frequency of 3MHz
KSB596OTU Applications
There are a lot of ON Semiconductor KSB596OTU applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
