MJD112TF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 2A 3V.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.The part has a transition frequency of 25MHz.The breakdown input voltage is 100V volts.During maximum operation, collector current can be as low as 2A volts.

MJD112TF Features

the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz

MJD112TF Applications

There are a lot of ON Semiconductor MJD112TF applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter