KSB596Y Overview

This device has a DC current gain of 120 @ 500mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -1V ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 300mA, 3A.With the emitter base voltage set at -5V, an efficient operation can be achieved.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

KSB596Y Features

the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz

KSB596Y Applications

There are a lot of ON Semiconductor KSB596Y applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter