MSB92AS1WT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 10V.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -5V for high efficiency.Parts of this part have transition frequencies of 50MHz.A maximum collector current of 500mA volts is possible.
MSB92AS1WT1G Features
the DC current gain for this device is 120 @ 1mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
a transition frequency of 50MHz
MSB92AS1WT1G Applications
There are a lot of ON Semiconductor MSB92AS1WT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
