KSB707YTU Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 3A 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 500mA, 5A.Product package TO-220-3 comes from the supplier.The device exhibits a collector-emitter breakdown at 60V.

KSB707YTU Features

the DC current gain for this device is 100 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3

KSB707YTU Applications

There are a lot of ON Semiconductor KSB707YTU applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver