KSB772YS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 1A 2V.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.80MHz is present in the transition frequency.A maximum collector current of 3A volts is possible.
KSB772YS Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 80MHz
KSB772YS Applications
There are a lot of ON Semiconductor KSB772YS applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
