BUL128D-B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BUL128D-B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
70W
Base Part Number
BUL128
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
70W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
12 @ 2A 5V
Current - Collector Cutoff (Max)
250μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
500mV @ 1A, 4A
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
Height
9.15mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.23294
$0.93176
BUL128D-B Product Details
BUL128D-B Overview
In this device, the DC current gain is 12 @ 2A 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.A VCE saturation (Max) of 500mV @ 1A, 4A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 9V to achieve high efficiency.A maximum collector current of 4A volts is possible.
BUL128D-B Features
the DC current gain for this device is 12 @ 2A 5V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 1A, 4A the emitter base voltage is kept at 9V
BUL128D-B Applications
There are a lot of STMicroelectronics BUL128D-B applications of single BJT transistors.