2SD1815T-TL-E Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 150mA, 1.5A.An emitter's base voltage can be kept at 6V to gain high efficiency.A maximum collector current of 3A volts is possible.
2SD1815T-TL-E Features
the DC current gain for this device is 70 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815T-TL-E Applications
There are a lot of ON Semiconductor 2SD1815T-TL-E applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
