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BCW61AMTF

BCW61AMTF

BCW61AMTF

ON Semiconductor

BCW61AMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BCW61AMTF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BCW61
Power - Max 350mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 100mA
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.614240 $5.61424
10 $5.296453 $52.96453
100 $4.996654 $499.6654
500 $4.713824 $2356.912
1000 $4.447004 $4447.004
BCW61AMTF Product Details

BCW61AMTF Overview


In this device, the DC current gain is 120 @ 2mA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 550mV @ 1.25mA, 50mA.SOT-23 is the supplier device package for this product.A 32V maximal voltage - Collector Emitter Breakdown is present in the device.

BCW61AMTF Features


the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the supplier device package of SOT-23

BCW61AMTF Applications


There are a lot of ON Semiconductor BCW61AMTF applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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