KSA928AYBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSA928AYBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 30mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
2A
Transition Frequency
120MHz
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
KSA928AYBU Product Details
KSA928AYBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 2V.When VCE saturation is 2V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Parts of this part have transition frequencies of 120MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSA928AYBU Features
the DC current gain for this device is 160 @ 500mA 2V the vce saturation(Max) is 2V @ 30mA, 1.5A a transition frequency of 120MHz
KSA928AYBU Applications
There are a lot of Rochester Electronics, LLC KSA928AYBU applications of single BJT transistors.