KSC1008GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC1008GTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
700mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
KSC1008
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
800mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
8V
hFE Min
40
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.261019
$0.261019
10
$0.246244
$2.46244
100
$0.232306
$23.2306
500
$0.219156
$109.578
1000
$0.206751
$206.751
KSC1008GTA Product Details
KSC1008GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.A collector emitter saturation voltage of 200mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 700mA.A transition frequency of 50MHz is present in the part.Breakdown input voltage is 60V volts.A maximum collector current of 700mA volts can be achieved.
KSC1008GTA Features
the DC current gain for this device is 200 @ 500mA 2V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 400mV @ 50mA, 500mA the emitter base voltage is kept at 8V the current rating of this device is 700mA a transition frequency of 50MHz
KSC1008GTA Applications
There are a lot of ON Semiconductor KSC1008GTA applications of single BJT transistors.