KSC1008GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.A collector emitter saturation voltage of 200mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 700mA.A transition frequency of 50MHz is present in the part.Breakdown input voltage is 60V volts.A maximum collector current of 700mA volts can be achieved.
KSC1008GTA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008GTA Applications
There are a lot of ON Semiconductor KSC1008GTA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
