2SB1386T100R Overview
In this device, the DC current gain is 180 @ 500mA 2V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100mA, 4A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5A.The part has a transition frequency of 120MHz.As a result, it can handle voltages as low as 20V volts.The maximum collector current is 5A volts.
2SB1386T100R Features
the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -5A
a transition frequency of 120MHz
2SB1386T100R Applications
There are a lot of ROHM Semiconductor 2SB1386T100R applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
