MPSA56RLRMG Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.A collector emitter saturation voltage of 250mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.As a result, it can handle voltages as low as 80V volts.When collector current reaches its maximum, it can reach 500mA volts.

MPSA56RLRMG Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz

MPSA56RLRMG Applications

There are a lot of ON Semiconductor MPSA56RLRMG applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface