KSC1507OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC1507OTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSC1507
Power - Max
15W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA 10V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
200μA
Frequency - Transition
80MHz
KSC1507OTU Product Details
KSC1507OTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 10mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 5mA, 50mA.There is no device package available from the supplier for this product.There is a 300V maximal voltage in the device due to collector-emitter breakdown.
KSC1507OTU Features
the DC current gain for this device is 70 @ 10mA 10V the vce saturation(Max) is 2V @ 5mA, 50mA the supplier device package of TO-220-3
KSC1507OTU Applications
There are a lot of ON Semiconductor KSC1507OTU applications of single BJT transistors.