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KSC1507OTU

KSC1507OTU

KSC1507OTU

ON Semiconductor

KSC1507OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC1507OTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC1507
Power - Max 15W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 200μA
Frequency - Transition 80MHz
KSC1507OTU Product Details

KSC1507OTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 10mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 5mA, 50mA.There is no device package available from the supplier for this product.There is a 300V maximal voltage in the device due to collector-emitter breakdown.

KSC1507OTU Features


the DC current gain for this device is 70 @ 10mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the supplier device package of TO-220-3

KSC1507OTU Applications


There are a lot of ON Semiconductor KSC1507OTU applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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