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KSC2330OTA

KSC2330OTA

KSC2330OTA

ON Semiconductor

KSC2330OTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2330OTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 371.1027mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation 1W
Terminal Position BOTTOM
Current Rating 100mA
Frequency 50MHz
Base Part Number KSC2330
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 7V
hFE Min 40
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.061280 $0.06128
500 $0.045059 $22.5295
1000 $0.037549 $37.549
2000 $0.034449 $68.898
5000 $0.032195 $160.975
10000 $0.029949 $299.49
15000 $0.028964 $434.46
50000 $0.028480 $1424
KSC2330OTA Product Details

KSC2330OTA Overview


In this device, the DC current gain is 70 @ 20mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 50MHz.There is a breakdown input voltage of 300V volts that it can take.When collector current reaches its maximum, it can reach 100mA volts.

KSC2330OTA Features


the DC current gain for this device is 70 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz

KSC2330OTA Applications


There are a lot of ON Semiconductor KSC2330OTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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