KSC2334OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2334OTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSC2334
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
7A
KSC2334OTU Product Details
KSC2334OTU Overview
This device has a DC current gain of 70 @ 3A 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.
KSC2334OTU Features
the DC current gain for this device is 70 @ 3A 5V the vce saturation(Max) is 600mV @ 500mA, 5A
KSC2334OTU Applications
There are a lot of ON Semiconductor KSC2334OTU applications of single BJT transistors.