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KSC2334OTU

KSC2334OTU

KSC2334OTU

ON Semiconductor

KSC2334OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2334OTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC2334
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 7A
KSC2334OTU Product Details

KSC2334OTU Overview


This device has a DC current gain of 70 @ 3A 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.

KSC2334OTU Features


the DC current gain for this device is 70 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A

KSC2334OTU Applications


There are a lot of ON Semiconductor KSC2334OTU applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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