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KSC2335R

  • KSC2335R
  • KSC2335R

KSC2335R

KSC2335R

ON Semiconductor

KSC2335R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2335R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code compliant
Base Part Number KSC2335
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 1.5W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 7A
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.176180 $0.17618
10 $0.166208 $1.66208
100 $0.156800 $15.68
500 $0.147925 $73.9625
1000 $0.139551 $139.551
KSC2335R Product Details

KSC2335R Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 1A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 400V maximal voltage is present.

KSC2335R Features


the DC current gain for this device is 20 @ 1A 5V
the vce saturation(Max) is 1V @ 600mA, 3A

KSC2335R Applications


There are a lot of ON Semiconductor KSC2335R applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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