MJD18002D2T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 6 @ 1A 1V DC current gain.A VCE saturation (Max) of 750mV @ 200mA, 1A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 11V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).As a result, the part has a transition frequency of 13MHz.The breakdown input voltage is 450V volts.Maximum collector currents can be below 2A volts.
MJD18002D2T4G Features
the DC current gain for this device is 6 @ 1A 1V
the vce saturation(Max) is 750mV @ 200mA, 1A
the emitter base voltage is kept at 11V
the current rating of this device is 2A
a transition frequency of 13MHz
MJD18002D2T4G Applications
There are a lot of ON Semiconductor MJD18002D2T4G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
