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KSC2335YTU

KSC2335YTU

KSC2335YTU

ON Semiconductor

KSC2335YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2335YTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC2335
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 7A
In-Stock:3117 items

KSC2335YTU Product Details

KSC2335YTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 1A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 600mA, 3A.Product comes in the supplier's device package TO-220-3.Collector Emitter Breakdown occurs at 400VV - Maximum voltage.

KSC2335YTU Features


the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 600mA, 3A
the supplier device package of TO-220-3

KSC2335YTU Applications


There are a lot of ON Semiconductor KSC2335YTU applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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