KSC2335YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2335YTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSC2335
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
7A
KSC2335YTU Product Details
KSC2335YTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 1A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 600mA, 3A.Product comes in the supplier's device package TO-220-3.Collector Emitter Breakdown occurs at 400VV - Maximum voltage.
KSC2335YTU Features
the DC current gain for this device is 40 @ 1A 5V the vce saturation(Max) is 1V @ 600mA, 3A the supplier device package of TO-220-3
KSC2335YTU Applications
There are a lot of ON Semiconductor KSC2335YTU applications of single BJT transistors.