ST83003 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
ST83003 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Subcategory
Other Transistors
Max Power Dissipation
40W
Base Part Number
ST83
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
16 @ 350mA 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage
400V
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
12V
hFE Min
10
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
ST83003 Product Details
ST83003 Overview
This device has a DC current gain of 16 @ 350mA 5V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 500mA.With the emitter base voltage set at 12V, an efficient operation can be achieved.Input voltage breakdown is available at 400V volts.During maximum operation, collector current can be as low as 1.5A volts.
ST83003 Features
the DC current gain for this device is 16 @ 350mA 5V the vce saturation(Max) is 500mV @ 100mA, 500mA the emitter base voltage is kept at 12V
ST83003 Applications
There are a lot of STMicroelectronics ST83003 applications of single BJT transistors.