ZXTBM322TA Overview
In this device, the DC current gain is 200 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4.5A.In this part, there is a transition frequency of 140MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible to have a collector current as low as 4.5A volts at Single BJT transistors maximum.
ZXTBM322TA Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 270mV @ 125mA, 4.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4.5A
a transition frequency of 140MHz
ZXTBM322TA Applications
There are a lot of Diodes Incorporated ZXTBM322TA applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
