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SMSD602-RT1G

  • SMSD602-RT1G
  • SMSD602-RT1G

SMSD602-RT1G

SMSD602-RT1G

ON Semiconductor

SMSD602-RT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMSD602-RT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Pin Count 3
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.071957 $0.071957
10 $0.067884 $0.67884
100 $0.064042 $6.4042
500 $0.060417 $30.2085
1000 $0.056997 $56.997
SMSD602-RT1G Product Details

SMSD602-RT1G Overview


This device has a DC current gain of 120 @ 150mA 10V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.During maximum operation, collector current can be as low as 500mA volts.

SMSD602-RT1G Features


the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA

SMSD602-RT1G Applications


There are a lot of ON Semiconductor SMSD602-RT1G applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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