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PBHV8118T,215

PBHV8118T,215

PBHV8118T,215

Nexperia USA Inc.

PBHV8118T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV8118T,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 30MHz
Base Part Number PBHV8118
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 180V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 50mV @ 20mA, 100mA
Collector Emitter Breakdown Voltage 180V
Transition Frequency 30MHz
Max Breakdown Voltage 180V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
hFE Min 50
Turn Off Time-Max (toff) 2060ns
Turn On Time-Max (ton) 572ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.792133 $0.792133
10 $0.747295 $7.47295
100 $0.704995 $70.4995
500 $0.665090 $332.545
1000 $0.627444 $627.444
PBHV8118T,215 Product Details

PBHV8118T,215 Overview


This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the base current and the collector current.When VCE saturation is 50mV @ 20mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.30MHz is present in the transition frequency.Input voltage breakdown is available at 180V volts.A maximum collector current of 1A volts is possible.

PBHV8118T,215 Features


the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 50mV @ 20mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

PBHV8118T,215 Applications


There are a lot of Nexperia USA Inc. PBHV8118T,215 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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