PBHV8118T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV8118T,215 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
30MHz
Base Part Number
PBHV8118
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
180V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
50mV @ 20mA, 100mA
Collector Emitter Breakdown Voltage
180V
Transition Frequency
30MHz
Max Breakdown Voltage
180V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
6V
hFE Min
50
Turn Off Time-Max (toff)
2060ns
Turn On Time-Max (ton)
572ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.792133
$0.792133
10
$0.747295
$7.47295
100
$0.704995
$70.4995
500
$0.665090
$332.545
1000
$0.627444
$627.444
PBHV8118T,215 Product Details
PBHV8118T,215 Overview
This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the base current and the collector current.When VCE saturation is 50mV @ 20mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.30MHz is present in the transition frequency.Input voltage breakdown is available at 180V volts.A maximum collector current of 1A volts is possible.
PBHV8118T,215 Features
the DC current gain for this device is 50 @ 500mA 10V the vce saturation(Max) is 50mV @ 20mA, 100mA the emitter base voltage is kept at 6V a transition frequency of 30MHz
PBHV8118T,215 Applications
There are a lot of Nexperia USA Inc. PBHV8118T,215 applications of single BJT transistors.