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KSC2881YTF

KSC2881YTF

KSC2881YTF

ON Semiconductor

KSC2881YTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2881YTF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 120MHz
KSC2881YTF Product Details

KSC2881YTF Overview


This device has a DC current gain of 120 @ 100mA 5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Supplier package SOT-89-3 contains the product.Device displays Collector Emitter Breakdown (120V maximal voltage).

KSC2881YTF Features


the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of SOT-89-3

KSC2881YTF Applications


There are a lot of ON Semiconductor KSC2881YTF applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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