KSC2881YTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2881YTF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
SOT-89-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
120MHz
KSC2881YTF Product Details
KSC2881YTF Overview
This device has a DC current gain of 120 @ 100mA 5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Supplier package SOT-89-3 contains the product.Device displays Collector Emitter Breakdown (120V maximal voltage).
KSC2881YTF Features
the DC current gain for this device is 120 @ 100mA 5V the vce saturation(Max) is 1V @ 50mA, 500mA the supplier device package of SOT-89-3
KSC2881YTF Applications
There are a lot of ON Semiconductor KSC2881YTF applications of single BJT transistors.