KSC5019MBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC5019MBU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
178.2mg
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
10V
Max Power Dissipation
750mW
Current Rating
2A
Frequency
150MHz
Base Part Number
KSC5019
Number of Elements
1
Element Configuration
Single
Power Dissipation
750mW
Gain Bandwidth Product
150MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
10V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 2A
Collector Emitter Breakdown Voltage
10V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
140
RoHS Status
RoHS Compliant
Lead Free
Lead Free
KSC5019MBU Product Details
KSC5019MBU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 2A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Maximum collector currents can be below 2A volts.
KSC5019MBU Features
the DC current gain for this device is 200 @ 500mA 1V the vce saturation(Max) is 500mV @ 50mA, 2A the emitter base voltage is kept at 6V the current rating of this device is 2A
KSC5019MBU Applications
There are a lot of ON Semiconductor KSC5019MBU applications of single BJT transistors.