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KSC5019MTA

  • KSC5019MTA
  • KSC5019MTA

KSC5019MTA

KSC5019MTA

ON Semiconductor

KSC5019MTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC5019MTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 10V
Max Power Dissipation 750mW
Terminal Position BOTTOM
Current Rating 2A
Frequency 150MHz
Base Part Number KSC5019
Number of Elements 1
Element Configuration Single
Power Dissipation 750mW
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 2A
Collector Emitter Breakdown Voltage 10V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 10V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 140
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.412374 $0.412374
10 $0.389032 $3.89032
100 $0.367012 $36.7012
500 $0.346237 $173.1185
1000 $0.326639 $326.639
KSC5019MTA Product Details

KSC5019MTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 500mA 1V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 50mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.A transition frequency of 150MHz is present in the part.An input voltage of 10V volts is the breakdown voltage.The maximum collector current is 2A volts.

KSC5019MTA Features


the DC current gain for this device is 140 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 150MHz

KSC5019MTA Applications


There are a lot of ON Semiconductor KSC5019MTA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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