KSC5603D datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC5603D Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power - Max
100W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 400mA 3V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 200μA, 1A
Voltage - Collector Emitter Breakdown (Max)
800V
Current - Collector (Ic) (Max)
3A
Transition Frequency
11MHz
Frequency - Transition
5MHz
Power Dissipation-Max (Abs)
3W
KSC5603D Product Details
KSC5603D Overview
DC current gain in this device equals 20 @ 400mA 3V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 200μA, 1A.In this part, there is a transition frequency of 11MHz.Detection of Collector Emitter Breakdown at 800V maximal voltage is present.
KSC5603D Features
the DC current gain for this device is 20 @ 400mA 3V the vce saturation(Max) is 2.5V @ 200μA, 1A a transition frequency of 11MHz
KSC5603D Applications
There are a lot of ON Semiconductor KSC5603D applications of single BJT transistors.