KSC815OTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC815OTA Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
178.2mg
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
45V
Max Power Dissipation
400mW
Current Rating
200mA
Base Part Number
KSC815
Element Configuration
Single
Gain Bandwidth Product
200MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 50mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
150mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
RoHS Status
RoHS Compliant
Lead Free
Lead Free
KSC815OTA Product Details
KSC815OTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 50mA 1V.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.When collector current reaches its maximum, it can reach 200mA volts.
KSC815OTA Features
the DC current gain for this device is 70 @ 50mA 1V a collector emitter saturation voltage of 150mV the vce saturation(Max) is 400mV @ 15mA, 150mA the emitter base voltage is kept at 5V the current rating of this device is 200mA
KSC815OTA Applications
There are a lot of ON Semiconductor KSC815OTA applications of single BJT transistors.