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KSD288O

KSD288O

KSD288O

ON Semiconductor

KSD288O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD288O Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD288
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 55V
Current - Collector (Ic) (Max) 3A
In-Stock:4702 items

KSD288O Product Details

KSD288O Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100mA, 1A.Product package TO-220-3 comes from the supplier.This device displays a 55V maximum voltage - Collector Emitter Breakdown.

KSD288O Features


the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of TO-220-3

KSD288O Applications


There are a lot of ON Semiconductor KSD288O applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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