KSD288YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD288YTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSD288
Power - Max
25W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
55V
Current - Collector (Ic) (Max)
3A
KSD288YTU Product Details
KSD288YTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).TO-220-3 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 55V.
KSD288YTU Features
the DC current gain for this device is 120 @ 500mA 5V the vce saturation(Max) is 1V @ 100mA, 1A the supplier device package of TO-220-3
KSD288YTU Applications
There are a lot of ON Semiconductor KSD288YTU applications of single BJT transistors.