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KSD288YTU

KSD288YTU

KSD288YTU

ON Semiconductor

KSD288YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD288YTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD288
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 55V
Current - Collector (Ic) (Max) 3A
KSD288YTU Product Details

KSD288YTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).TO-220-3 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 55V.

KSD288YTU Features


the DC current gain for this device is 120 @ 500mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of TO-220-3

KSD288YTU Applications


There are a lot of ON Semiconductor KSD288YTU applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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