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KSD363O

KSD363O

KSD363O

ON Semiconductor

KSD363O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD363O Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code compliant
Base Part Number KSD363
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 40W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1A 5V
Current - Collector Cutoff (Max) 1mA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 6A
Transition Frequency 10MHz
Frequency - Transition 10MHz
KSD363O Product Details

KSD363O Overview


In this device, the DC current gain is 70 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 1V @ 100mA, 1A means Ic has reached its maximum value(saturated).Parts of this part have transition frequencies of 10MHz.The device has a 120V maximal voltage - Collector Emitter Breakdown.

KSD363O Features


the DC current gain for this device is 70 @ 1A 5V
the vce saturation(Max) is 1V @ 100mA, 1A
a transition frequency of 10MHz

KSD363O Applications


There are a lot of ON Semiconductor KSD363O applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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