KSD363Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD363Y Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Reach Compliance Code
compliant
Base Part Number
KSD363
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
40W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1A 5V
Current - Collector Cutoff (Max)
1mA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
6A
Transition Frequency
10MHz
Frequency - Transition
10MHz
KSD363Y Product Details
KSD363Y Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 1A.In the part, the transition frequency is 10MHz.Device displays Collector Emitter Breakdown (120V maximal voltage).
KSD363Y Features
the DC current gain for this device is 120 @ 1A 5V the vce saturation(Max) is 1V @ 100mA, 1A a transition frequency of 10MHz
KSD363Y Applications
There are a lot of ON Semiconductor KSD363Y applications of single BJT transistors.