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KSD363Y

KSD363Y

KSD363Y

ON Semiconductor

KSD363Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD363Y Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code compliant
Base Part Number KSD363
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 40W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 5V
Current - Collector Cutoff (Max) 1mA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 6A
Transition Frequency 10MHz
Frequency - Transition 10MHz
KSD363Y Product Details

KSD363Y Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 1A.In the part, the transition frequency is 10MHz.Device displays Collector Emitter Breakdown (120V maximal voltage).

KSD363Y Features


the DC current gain for this device is 120 @ 1A 5V
the vce saturation(Max) is 1V @ 100mA, 1A
a transition frequency of 10MHz

KSD363Y Applications


There are a lot of ON Semiconductor KSD363Y applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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