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KSD569OTU

KSD569OTU

KSD569OTU

ON Semiconductor

KSD569OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD569OTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 3A 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 7A
KSD569OTU Product Details

KSD569OTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 3A 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The product comes in the supplier device package of TO-220-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

KSD569OTU Features


the DC current gain for this device is 60 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3

KSD569OTU Applications


There are a lot of ON Semiconductor KSD569OTU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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