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KSC1173YTU

KSC1173YTU

KSC1173YTU

ON Semiconductor

KSC1173YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC1173YTU Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Weight 1.8g
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Max Power Dissipation 10W
Current Rating 3A
Frequency 100MHz
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 10W
Power - Max 10W
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 30V
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 3A
Collector Emitter Saturation Voltage 300mV
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 70
RoHS Status RoHS Compliant
Lead Free Lead Free
KSC1173YTU Product Details

KSC1173YTU Overview


DC current gain in this device equals 120 @ 500mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.Supplier package TO-220-3 contains the product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.Collector current can be as low as 3A volts at its maximum.

KSC1173YTU Features


the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
the supplier device package of TO-220-3

KSC1173YTU Applications


There are a lot of ON Semiconductor KSC1173YTU applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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