KSC1173YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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KSC1173YTU Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 2 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Weight
1.8g
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Max Power Dissipation
10W
Current Rating
3A
Frequency
100MHz
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
10W
Power - Max
10W
Gain Bandwidth Product
100MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
30V
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
Collector Emitter Saturation Voltage
300mV
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
70
RoHS Status
RoHS Compliant
Lead Free
Lead Free
KSC1173YTU Product Details
KSC1173YTU Overview
DC current gain in this device equals 120 @ 500mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.Supplier package TO-220-3 contains the product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.Collector current can be as low as 3A volts at its maximum.
KSC1173YTU Features
the DC current gain for this device is 120 @ 500mA 2V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 800mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 3A the supplier device package of TO-220-3
KSC1173YTU Applications
There are a lot of ON Semiconductor KSC1173YTU applications of single BJT transistors.