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PHE13009,127

PHE13009,127

PHE13009,127

WeEn Semiconductors

PHE13009,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13009,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 1.6A, 8A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 12A
RoHS StatusRoHS Compliant
In-Stock:4887 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.961680$4.96168
10$4.680830$46.8083
100$4.415878$441.5878
500$4.165922$2082.961
1000$3.930115$3930.115

PHE13009,127 Product Details

PHE13009,127 Overview


In this device, the DC current gain is 8 @ 5A 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 1.6A, 8A.Collector Emitter Breakdown occurs at 400VV - Maximum voltage.

PHE13009,127 Features


the DC current gain for this device is 8 @ 5A 5V
the vce saturation(Max) is 2V @ 1.6A, 8A

PHE13009,127 Applications


There are a lot of WeEn Semiconductors PHE13009,127 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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