PHE13009,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
PHE13009,127 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Position
SINGLE
Reference Standard
IEC-134
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 5A 5V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 1.6A, 8A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
12A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.961680
$4.96168
10
$4.680830
$46.8083
100
$4.415878
$441.5878
500
$4.165922
$2082.961
1000
$3.930115
$3930.115
PHE13009,127 Product Details
PHE13009,127 Overview
In this device, the DC current gain is 8 @ 5A 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 1.6A, 8A.Collector Emitter Breakdown occurs at 400VV - Maximum voltage.
PHE13009,127 Features
the DC current gain for this device is 8 @ 5A 5V the vce saturation(Max) is 2V @ 1.6A, 8A
PHE13009,127 Applications
There are a lot of WeEn Semiconductors PHE13009,127 applications of single BJT transistors.