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KSD73Y

KSD73Y

KSD73Y

ON Semiconductor

KSD73Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD73Y Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD73
Power - Max 30W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 10V
Current - Collector Cutoff (Max) 5mA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 20MHz
KSD73Y Product Details

KSD73Y Overview


In this device, the DC current gain is 120 @ 1A 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 2V @ 500mA, 5A means Ic has reached its maximum value(saturated).This product comes in a TO-220-3 device package from the supplier.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

KSD73Y Features


the DC current gain for this device is 120 @ 1A 10V
the vce saturation(Max) is 2V @ 500mA, 5A
the supplier device package of TO-220-3

KSD73Y Applications


There are a lot of ON Semiconductor KSD73Y applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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