KSD880OPATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD880OPATU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSD880
Power - Max
30W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
3MHz
KSD880OPATU Product Details
KSD880OPATU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 300mA, 3A.Supplier package TO-220-3 contains the product.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
KSD880OPATU Features
the DC current gain for this device is 60 @ 500mA 5V the vce saturation(Max) is 1V @ 300mA, 3A the supplier device package of TO-220-3
KSD880OPATU Applications
There are a lot of ON Semiconductor KSD880OPATU applications of single BJT transistors.