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KSD880OPATU

KSD880OPATU

KSD880OPATU

ON Semiconductor

KSD880OPATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD880OPATU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD880
Power - Max 30W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 3MHz
In-Stock:3439 items

KSD880OPATU Product Details

KSD880OPATU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 300mA, 3A.Supplier package TO-220-3 contains the product.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

KSD880OPATU Features


the DC current gain for this device is 60 @ 500mA 5V
the vce saturation(Max) is 1V @ 300mA, 3A
the supplier device package of TO-220-3

KSD880OPATU Applications


There are a lot of ON Semiconductor KSD880OPATU applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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